High-voltage shifter with reduced transistor degradation

ABSTRACT

Discussed herein are systems and methods for protecting against transistor degradation in a high-voltage (HV) shifter to transfer an input voltage to an access line, such as a global wordline. An embodiment of a memory device comprises memory cells and a HV shifter circuit that includes a signal transfer circuit, and first and second HV control circuits. The signal transfer circuit includes a P-channel transistor to transfer a high-voltage input to an access line. The first HV control circuit couples a bias voltage to the P-channel transistor for a first time period, and the second HV control circuit couples a stress-relief signal to the P-channel transistor for a second time period, after the first time period, to reduce degradation of the P-channel transistor. The transferred high voltage can be used to charge the access line to selectively read, program, or erase memory cells.

PRIORITY APPLICATION

This application is a continuation of U.S. application Ser. No.16/259,671, filed Jan. 28, 2019, which is incorporated herein byreference in its entirety.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic devices. There aremany different types of memory, including volatile and non-volatilememory. Volatile memory requires power to maintain its data, andincludes random-access memory (RAM), dynamic random-access memory(DRAM), or synchronous dynamic random-access memory (SDRAM), amongothers. Non-volatile memory can retain stored data when not powered, andincludes flash memory, read-only memory (ROM), electrically erasableprogrammable ROM (EEPROM), static RAM (SRAM), erasable programmable ROM(EPROM), resistance variable memory, such as phase-change random-accessmemory (PCRAM), resistive random-access memory (RRAM), magnetoresistiverandom-access memory (MRAM), or 3D XPoint™ memory, among others.

Flash memory is utilized as non-volatile memory for a wide range ofelectronic applications. Flash memory devices typically include one ormore groups of one-transistor, floating gate or charge trap memory cellsthat allow for high memory densities, high reliability, and low powerconsumption. Two common types of flash memory array architecturesinclude NAND and NOR architect

ures, named after the logic form in which the basic memory cellconfiguration of each is arranged. The memory cells of the memory arrayare typically arranged in a matrix.

Traditional memory arrays are two-dimensional (2D) structures arrangedon a surface of a semiconductor substrate. To increase memory capacityfor a given area, and to decrease cost, the size of the individualmemory cells has decreased. However, there is a technological limit tothe reduction in size of the individual memory cells, and thus, to thememory density of 2D memory arrays. In response, three-dimensional (3D)memory structures, such as 3D NAND architecture semiconductor memorydevices, are being developed to further increase memory density andlower memory cost.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, which are not necessarily drawn to scale, like numeralsmay describe similar components in different views. Like numerals havingdifferent letter suffixes may represent different instances of similarcomponents. The drawings illustrate generally, by way of example, butnot by way of limitation, various embodiments discussed in the presentdocument.

FIG. 1 illustrates an example of an environment including a memorydevice.

FIGS. 2-3 are schematic diagrams illustrating examples of NANDarchitecture semiconductor memory array.

FIG. 4 is a block diagram illustrating an example of a memory module.

FIG. 5 is a block diagram illustrating prior art word line (WL) driversin a row decoder.

FIG. 6 is a schematic diagram illustrating a prior art high-voltage (HV)shifter 600.

FIG. 7 is a timing diagram illustrating an operation of the HV shifter600, including the voltage level shifting and compensation of transistordegradation.

FIG. 8 is a schematic diagram illustrating an example of a HV shifter800 with reduced transistor degradation, according to one embodimentdiscussed herein.

FIGS. 9A-9C are diagrams illustrating examples of signal generators forgenerating control signals and stress-relief signals for protectingagainst transistor degradation in a HV shifter.

FIG. 10 is timing diagram illustrating an operation of a selectedhigh-voltage shifter.

FIG. 11 is timing diagram illustrating an operation of an unselectedhigh-voltage shifter.

FIG. 12 is a flow chart illustrating a method of addressing transistordegradation in a high-voltage shifter.

FIG. 13 is a block diagram illustrating an example of a machine uponwhich one or more embodiments may be implemented.

DETAILED DESCRIPTION

During a typical programming operation of a flash memory cell (e.g., aNAND flash memory), a selected word line coupled to the selected memorycell to be programmed can be biased with a series of incrementingvoltage programming pulses that start at an initial voltage that isgreater than a predetermined programming voltage (V_(PGM)). Theprogramming pulse increases a charge level, thereby increasing the cellthreshold voltage Vth, on a floating gate of the memory cell. A chargepump circuit may be used in a non-volatile memory device such as a NANDflash memory to generate the voltages required for chip operation. Acharge pump is an electronic circuit that uses capacitors as energystorage elements to convert DC voltages into other DC voltages. Aftereach programming pulse, a verification operation with a word linevoltage of 0V is performed to determine if the cell threshold voltagehas increased to the desired programmed level.

High-voltage (HV) shifters, or HV level shifters, have been used invarious memory devices (e.g., NAND flash memory) to provide desiredvoltages at different magnitude to selectively operate a memory cell,such as read, program, or erase a memory cell. In a memory device,components or subcircuits may have different voltage requirements tofulfill respective functions. A HV shifter may serve as an interfacebetween different logic device components to translate signals from onelogic level or voltage domain to another logic level of voltage domain,thereby enabling compatibility among the voltage levels of differentcomponents or subcircuits. Providing appropriate operating voltages tospecific circuit components can increase reliability of a memory deviceand decrease power consumption. In an example, a HV level shiftercircuit may be used to translate a block wordline (WL) signal of a highvoltage to different memory array blocks, such as in response to a blockselection signal. In response to the block WL signal received from theHV level shifter, driving voltages may be provided to the WLscorresponding to various memory cell array block. An exemplaryapplication of HV level shifters to translate a high-voltage input toone or more WLs is discussed in FIG. 5 below.

In today's 3D NAND flash memory, the required number of HV shifters isincreasing, as the high-voltage supply system gets complicated. ReducingHV shifter size and complexity (e.g., reducing the number of transistorsin a HV shifter), and thereby reducing chip layout area and die size,have become an important requirement in modem memory device design. Oneof the technological challenges in reducing HV shifter size andcomplexity has to do with a degradation of sensitive transistors in a HVshifter. For example, FIG. 6 is a schematic diagram illustrating a priorart high-voltage shifter that includes a number of HV transistors. Someof these HV transistors, such as high-voltage PMOS transistors (HVP's)on a path between an input port for receiving a high-voltage input andan output port connecting to an access line, are under a high-voltagestress. Some transistors may degrade after many cycles of repetitiveuse. For example, under the stress imposed by a high gate-to-channelvoltage gradient (also referred to as “V_gate-V_channel” stress), a HVPcan degrade, represented by an increased threshold voltage (Vth) overtime. To compensate for such a degradation, many components are includedin the HV shifter. This may take more chip space and increase HV shiftercomplexity and cost.

The present inventor has recognized an improved solution to transistordegradation in a HV shifter, including a HV shifter circuit, and methodsof using the same, that can reduce, and in some cases prevent,degradation of HV transistors in a HV shifter circuit, while at the samereducing the components and complexity of the shifter and overall sizeof a chip. In various embodiments, this document discusses, among otherthings, a memory device comprising a group of memory cells, and a HVshifter circuit including a signal transfer circuit, and first andsecond HV control circuits. A P-channel transistor of the signaltransfer circuit can transfer a high-voltage input to an access line.The first HV control circuit can couple a bias voltage to the P-channeltransistor for a first time period. After the first time period, thesecond HV control circuit can couple a stress-relief signal to theP-channel transistor for a second time period to protect the P-channeltransistor against degradation. The transferred high voltage can be usedto charge the access line to selectively read, program, or erase memorycells. Methods of forming such apparatus are also disclosed, as well asmethods of operation, and other embodiments.

In the following detailed description, reference is made to theaccompanying drawings that form a part hereof and in which is shown, byway of illustration, specific embodiments. In the drawings, likenumerals describe substantially similar components throughout theseveral views. Other embodiments may be utilized and structural,logical, and electrical changes may be made without departing from thescope of the present disclosure. The following detailed description is,therefore, not to be taken in a limiting sense.

FIG. 1 illustrates an example of a memory device 110 that may beincluded in a variety of products, such as Internet of Things (IoT)devices (e.g., a refrigerator or other appliance, sensor, motor oractuator, mobile communication device, automobile, drone, etc.) tosupport processing, communications, or control of a product. The memorydevice 110 includes a memory controller 115 and a memory array 120. Thememory array 120 may include a number of individual memory die (e.g., atwo-dimensional (2D) NAND die, or a stack of three-dimensional (3D) NANDdie). The memory arrays 120 can be 2D structures arranged on a surfaceof a semiconductor substrate. To increase memory capacity for a givenarea, and to decrease cost, the size of the individual memory cells hasdecreased. Alternatively, memory arrays 120 can be 3D structures, suchas 3D NAND memory devices that can further increase memory density andlower memory cost.

Such 3D NAND devices often include strings of storage cells, coupled inseries (e.g., drain to source), between one or more source-side selectgates (SGSs) proximate a source, and one or more drain-side select gates(SGDs) proximate a bit line. In an example, the SGSs or the SGDs caninclude one or more field-effect transistors (FETs) or metal-oxidesemiconductor (MOS) structure devices, etc. In some examples, thestrings will extend vertically, through multiple vertically spaced tierscontaining respective word lines. A semiconductor structure may extendadjacent a string of storage cells to form a channel for the storagescells of the string. In the example of a vertical string, thepolysilicon structure may be in the form of a vertically extendingpillar. In some examples the string may be “folded,” and thus arrangedrelative to a U-shaped pillar. In other examples, multiple verticalstructures may be stacked upon one another to form stacked arrays ofstorage cell strings.

In 3D architecture semiconductor memory technology, vertical structuresare stacked, increasing the number of tiers, physical pages, andaccordingly, the density of a memory device (e.g., a storage device). Inan example, the memory device 110 can be a discrete memory or storagedevice component of a host device. In other examples, the memory device110 can be a portion of an integrated circuit (e.g., system on a chip(SOC), etc.), stacked or otherwise included with one or more othercomponents of a host device.

The memory controller 115 can communicate with the memory array 120,such as to transfer data to (e.g., write or erase) or from (e.g., read)one or more of the memory cells, planes, sub-blocks, blocks, or pages ofthe memory array. The memory controller 115 can include, among otherthings, circuitry or firmware, including one or more components orintegrated circuits. For example, the memory controller 115 can includeone or more memory control units, circuits, or components configured tocontrol access across the memory array 120 and to provide a translationlayer between a host and the memory device 110. The memory controller115 can include one or more input/output (I/O) circuits, lines, orinterfaces to transfer data to or from the memory array 120. The memorycontroller 115 can include a memory manager 125 and an array controller135.

The memory manager 125 can include, among other things, circuitry orfirmware, such as a number of components or integrated circuitsassociated with various memory management functions. For purposes of thepresent description, example memory operation and management functionswill be described in the context of NAND memory. Persons skilled in theart will recognize that other forms of non-volatile memory may haveanalogous memory operations or management functions. Such NANDmanagement functions include wear leveling (e.g., garbage collection orreclamation), error detection or correction, block retirement, or one ormore other memory management functions. The memory manager 125 can parseor format host commands (e.g., commands received from a host) intodevice commands (e.g., commands associated with operation of a memoryarray, etc.), or generate device commands (e.g., to accomplish variousmemory management functions) for the array controller 135 or one or moreother components of the memory device 110.

The memory manager 125 can include a set of management tables 130configured to maintain various information associated with one or morecomponent of the memory device 110 (e.g., various information associatedwith a memory array or one or more memory cells coupled to the memorycontroller 115). For example, the management tables 130 can includeinformation regarding block age, block erase count, error history, orone or more error counts (e.g., a write operation error count, a readbit error count, a read operation error count, an erase error count,etc.) for one or more blocks of memory cells coupled to the memorycontroller 115. In certain examples, if the number of detected errorsfor one or more of the error counts is above a threshold, the bit errorcan be referred to as an uncorrectable bit error. The management tables130 can maintain a count of correctable or uncorrectable bit errors,among other things.

The array controller 135 can include, among other things, circuitry orcomponents configured to control memory operations associated withwriting data to, reading data from, or erasing one or more memory cellsof the memory device 110 coupled to the memory controller 115. The arraycontroller 135 can include an error correction code (ECC) component 140,which can include, among other things, an ECC engine or other circuitryconfigured to detect or correct errors associated with writing data toor reading data from one or more memory cells of the memory device 110coupled to the memory controller 115. The memory controller 115 can beconfigured to actively detect and recover from error occurrences (e.g.,bit errors, operation errors, etc.) associated with various operationsor storage of data, while maintaining integrity of the data transferredbetween a host and the memory device 110, or maintaining integrity ofstored data (e.g., using redundant RAID storage, etc.), and can remove(e.g., retire) failing memory resources (e.g., memory cells, memoryarrays, pages, blocks, etc.) to prevent future errors.

In some examples, the memory array may comprise a number of NAND diesand one or more functions of the memory controller 115 for a particularNAND die may be implemented on an on-die controller on that particulardie. Other organizations and delineations of control functionality mayalso be utilized, such as a controller for each die, plane, superblock,block, page, and the like.

The memory array 120 can include several memory cells arranged in, forexample, a number of devices, semi-conductor dies, planes, sub-blocks,blocks, or pages. In operation, data is typically written to or readfrom the NAND memory device 110 in pages, and erased in blocks. However,one or more memory operations (e.g., read, write, erase, etc.) can beperformed on larger or smaller groups of memory cells, as desired. Thedata transfer size of a NAND memory device 110 is typically referred toas a page; whereas the data transfer size of a host is typicallyreferred to as a sector.

Although a page of data can include a number of bytes of user data(e.g., a data payload including a number of sectors of data) and itscorresponding metadata, the size of the page often refers only to thenumber of bytes used to store the user data. As an example, a page ofdata having a page size of 4 KB may include 4 KB of user data (e.g., 8sectors assuming a sector size of 512 B) as well as a number of bytes(e.g., 32 B, 54 B, 224 B, etc.) of metadata corresponding to the userdata, such as integrity data (e.g., error detecting or correcting codedata), address data (e.g., logical address data, etc.), or othermetadata associated with the user data.

Different types of memory cells or memory arrays 120 can provide fordifferent page sizes, or may require different amounts of metadataassociated therewith. For example, different memory device types mayhave different bit error rates, which can lead to different amounts ofmetadata necessary to ensure integrity of the page of data (e.g., amemory device with a higher bit error rate may require more bytes oferror correction code data than a memory device with a lower bit errorrate). As an example, a multi-level cell (MLC) NAND flash device mayhave a higher bit error rate than a corresponding single-level cell(SLC) NAND flash device. As such, the MLC device may require moremetadata bytes for error data than the corresponding SLC device.

FIG. 2 is a schematic diagram illustrating an example of a 3D NANDarchitecture semiconductor memory array 200 including a number ofstrings of memory cells (e.g., first-third A₀ memory strings205A₀-207A₀, first-third A_(n) memory strings 205A_(n)-207A_(n),first-third B₀ memory strings 205B₀-207B₀, first-third B_(n) memorystrings 205B_(n)-207B_(n), etc.), organized in blocks (e.g., block A201A, block B 201B, etc.) and sub-blocks (e.g., sub-block A₀ 201A₀,sub-block A_(n) 201A_(n), sub-block B₀ 201B₀, sub-block B_(n) 201B_(n),etc.). The memory array 200 represents a portion of a greater number ofsimilar structures that would typically be found in a block, device, orother unit of a memory device.

Each string of memory cells includes a number of tiers of charge storagetransistors (e.g., floating gate transistors, charge-trappingstructures, etc.) stacked in the Z direction, source to drain, between asource line (SRC) 235 or a source-side select gate (SGS) (e.g.,first-third A₀ SGS 231A₀-233A₀, first-third A_(n) SGS 231A_(n)-233A_(n),first-third B₀ SGS 231B₀-233B₀, first-third B_(n) SGS 231B_(n)-233B_(n),etc.) and a drain-side select gate (SGD) (e.g., first-third A₀ SGD226A₀-228A₀, first-third A_(n) SGD 226A_(n)-228A_(n), first-third B₀ SGD226B₀-228B₀, first-third B_(n) SGD 226B_(n)-228B_(n), etc.). Each stringof memory cells in the 3D memory array can be arranged along the Xdirection as data lines (e.g., bit lines (BL) BL0-BL2 220-222), andalong the Y direction as physical pages.

Within a physical page, each tier represents a row of memory cells, andeach string of memory cells represents a column. A sub-block can includeone or more physical pages. A block can include a number of sub-blocks(or physical pages) (e.g., 128, 256, 384, etc.). Although illustratedherein as having two blocks, each block having two sub-blocks, eachsub-block having a single physical page, each physical page having threestrings of memory cells, and each string having 8 tiers of memory cells,in other examples, the memory array 200 can include more or fewerblocks, sub-blocks, physical pages, strings of memory cells, memorycells, or tiers. For example, each string of memory cells can includemore or fewer tiers (e.g., 16, 32, 64, 128, etc.), as well as one ormore additional tiers of semiconductor material above or below thecharge storage transistors (e.g., select gates, data lines, etc.), asdesired. As an example, a 48 GB TLC NAND memory device can include18,592 bytes (B) of data per page (16,384+2208 bytes), 1536 pages perblock, 548 blocks per plane, and 4 or more planes per device.

Each memory cell in the memory array 200 includes a control gate (CG)coupled to (e.g., electrically or otherwise operatively connected to) anaccess line (e.g., word lines (WL) WL0 ₀-WL7 ₀ 210A-217A, WL0 ₁-WL7 ₁210B-217B, etc.), which collectively couples the control gates (CGs)across a specific tier, or a portion of a tier, as desired. Specifictiers in the 3D memory array, and accordingly, specific memory cells ina string, can be accessed or controlled using respective access lines.Groups of select gates can be accessed using various select lines. Forexample, first-third A₀ SGD 226A₀-228A₀ can be accessed using an A₀ SGDline SGDA₀ 225A₀, first-third A_(n) SGD 226A_(n)-228A_(n) can beaccessed using an SGD line SGDA_(n) 225A_(n), first-third B₀ SGD226B₀-228B₀ can be accessed using an B₀ SGD line SGDB₀ 225B₀, andfirst-third B_(n) SGD 226B_(n)-228B_(n) can be accessed using an B_(n)SGD line SGDB_(n) 225B_(n). First-third A₀ SGS 231A₀-233A₀ andfirst-third A_(n) SGS 231A_(n)-233A_(n) can be accessed using a gateselect line SGS₀ 230A, and first-third B₀ SGS 231B₀-233B₀ andfirst-third B_(n) SGS 231B_(n)-233B_(n) can be accessed via a gateselect line SGS₁ 230B.

In an example, the memory array 200 can include a number of levels ofsemiconductor material (e.g., polysilicon, etc.) configured to couplethe control gates (CGs) of each memory cell or select gate (or a portionof the CGs or select gates) of a respective tier of the array. Specificstrings of memory cells in the array can be accessed, selected, orcontrolled using a combination of bit lines (BLs) and select gates,etc., and specific memory cells at one or more tiers in the specificstrings can be accessed, selected, or controlled using one or moreaccess lines (e.g., WLs).

FIG. 3 illustrates an example schematic diagram of a portion of a NANDarchitecture semiconductor memory array 300 including a plurality ofmemory cells 302 arranged in a two-dimensional array of strings (e.g.,first-third strings 305-307) and tiers (e.g., illustrated as respectiveword lines (WL) WL0-WL7 310-317, a drain-side select gate (SGD) line325, a source-side select gate (SGS) line 330, etc.), and senseamplifiers or devices 360. For example, the memory array 300 canillustrate an example schematic diagram of a portion of one physicalpage of memory cells of a 3D NAND architecture semiconductor memorydevice, such as illustrated in FIG. 2.

Each string of memory cells is coupled to a source line (SRC) using arespective source-side select gate (SGS) (e.g., first-third SGS331-333), and to a respective data line (e.g., first-third bit lines(BL) BL0-BL2 320-322) using a respective drain-side select gate (SGD)(e.g., first-third SGD 326-328). Although illustrated with 8 tiers(e.g., using word lines (WL) WL0-WL7 310-317) and three data lines(BL0-BL2 326-328) in the example of FIG. 3, other examples can includestrings of memory cells having more or fewer tiers or data lines, asdesired.

In a NAND architecture semiconductor memory array, such as the examplememory array 300, the state of a selected memory cell 302 can beaccessed by sensing a current or voltage variation associated with aparticular data line containing the selected memory cell. The memoryarray 300 can be accessed (e.g., by a control circuit, one or moreprocessors, digital logic, etc.) using one or more drivers. In anexample, one or more drivers can activate a specific memory cell, or setof memory cells, by driving a particular potential to one or more datalines (e.g., bit lines BL0-BL2), access lines (e.g., word linesWL0-WL7), or select gates, depending on the type of operation desired tobe performed on the specific memory cell or set of memory cells.

To program or write data to a memory cell, a programming voltage (Vpgm)(e.g., one or more programming pulses, etc.) can be applied to selectedword lines (e.g., WL4), and thus, to a control gate of each memory cellcoupled to the selected word lines (e.g., first-third control gates(CGs) 341-343 of the memory cells coupled to WL4). Programming pulsescan begin, for example, at or near 15V, and, in certain examples, canincrease in magnitude during each programming pulse application. Whilethe program voltage is applied to the selected word lines, a potential,such as a ground potential Vss, can be applied to the data lines (e.g.,bit lines) and substrates (and thus the channels, between the sourcesand drains) of the memory cells targeted for programming, resulting in acharge transfer (e.g., direct injection or Fowler-Nordheim (FN)tunneling, etc.) from the channels to the floating gates of the targetedmemory cells.

In contrast, a pass voltage (V_(PASS)) can be applied to one or moreword lines having memory cells that are not targeted for programming, oran inhibit voltage (e.g., Vcc can be applied to data lines (e.g., bitlines) having memory cells that are not targeted for programming, forexample, to inhibit charge from being transferred from the channels tothe floating gates of such non-targeted memory cells. The pass voltagecan be variable, depending, for example, on the proximity of the appliedpass voltages to a word line targeted for programming. The inhibitvoltage can include a supply voltage (Vcc), such as a voltage from anexternal source or supply (e.g., a battery, an AC-to-DC converter,etc.), relative to a ground potential Vss.

As an example, if a programming voltage (e.g., 15V or more) is appliedto a specific word line, such as WL4, a pass voltage of 10V can beapplied to one or more other word lines, such as WL3, WL5, etc. toinhibit programming of non-targeted memory cells, or to retain thevalues stored on such memory cells not targeted for programming. As thedistance between an applied program voltage and the non-targeted memorycells increases, the pass voltage required to refrain from programmingthe non-targeted memory cells can decrease. For example, where aprogramming voltage of 15V is applied to WL4, a pass voltage of 10V canbe applied to WL3 and WL5, a pass voltage of 8V can be applied to WL2and WL6, a pass voltage of 7V can be applied to WL1 and WL7, etc. Inother examples, the pass voltages, or number of word lines, etc., can behigher or lower, or more or less.

The sense amplifiers 360, coupled to one or more of the data lines(e.g., first, second, or third bit lines (BL0-BL2) 320-322), can detectthe state of each memory cell in respective data lines by sensing avoltage or current on a particular data line.

Between applications of one or more programming pulses (e.g., Vpgm), averify operation can be performed to determine if a selected memory cellhas reached its intended programmed state. If the selected memory cellhas reached its intended programmed state, it can be inhibited fromfurther programming. If the selected memory cell has not reached itsintended programmed state, additional programming pulses can be applied.If the selected memory cell has not reached its intended programmedstate after a particular number of programming pulses (e.g., a maximumnumber), the selected memory cell, or a string, block, or pageassociated with such selected memory cell, can be marked as defective.

To erase a memory cell or a group of memory cells (e.g., erasure istypically performed in blocks or sub-blocks), an erasure voltage (Vers)(e.g., typically Vpgm) can be applied to the substrates (and thus thechannels, between the sources and drains) of the memory cells targetedfor erasure (e.g., using one or more bit lines, select gates, etc.),while the word lines of the targeted memory cells are kept at apotential, such as a ground Vss, resulting in a charge transfer (e.g.,direct injection or Fowler-Nordheim (FN) tunneling, etc.) from thefloating gates of the targeted memory cells to the channels.

FIG. 4 is a block diagram illustrating an example of a memory device 400including a memory array 402 having a plurality of memory cells 404, andone or more circuits or components to provide communication with, orperform one or more memory operations on, the memory array 402. Thememory device 400 can include a row decoder 412, a column decoder 414,sense amplifiers 420, a page buffer 422, a selector 424, an input/output(I/O) circuit 426, and a memory control unit 430.

The memory cells 404 of the memory array 402 can be arranged in blocks,such as first and second blocks 402A, 402B. Each block can includesub-blocks. For example, the first block 402A can include first andsecond sub-blocks 402A₀, 402A_(n), and the second block 402B can includefirst and second sub-blocks 402B₀, 402B_(n). Each sub-block can includea number of physical pages, each page including a number of memory cells404. Although illustrated herein as having two blocks, each block havingtwo sub-blocks, and each sub-block having a number of memory cells 404,in other examples, the memory array 402 can include more or fewerblocks, sub-blocks, memory cells, etc. In other examples, the memorycells 404 can be arranged in a number of rows, columns, pages,sub-blocks, blocks, etc., and accessed using, for example, access lines406, first data lines 410, or one or more select gates, source lines,etc.

The memory control unit 430 can control memory operations of the memorydevice 400 according to one or more signals or instructions received oncontrol lines 432, including, for example, one or more clock signals orcontrol signals that indicate a desired operation (e.g., write, read,erase, etc.), or address signals (A0-AX) received on one or more addresslines 416. One or more devices external to the memory device 400 cancontrol the values of the control signals on the control lines 432, orthe address signals on the address line 416. Examples of devicesexternal to the memory device 400 can include, but are not limited to, ahost, a memory controller, a processor, or one or more circuits orcomponents not illustrated in FIG. 4.

The memory device 400 can use access lines 406 and first data lines 410to transfer data to (e.g., write or erase) or from (e.g., read) one ormore of the memory cells 404. The memory control unit 430 may include astate machine 431 coupled to the row decoder 412, the column decoder414, and the I/O circuit 426. The state machine 413 can also outputstatus data of the flash memory such as READY/BUSY or PASS/FAIL. In somedesigns, the state machine 413 can be configured to manage theprogramming process. The row decoder 412 and the column decoder 414 canreceive and decode the address signals (A0-AX) from the address line416, determine which of the memory cells 404 are to be accessed, andprovide signals to one or more of the access lines 406 (e.g., one ormore of a plurality of word lines (WL0-WLm)) or the first data lines 410(e.g., one or more of a plurality of bit lines (BL0-BLn)), such asdescribed above.

The memory device 400 can include sense circuitry, such as the senseamplifiers 420, configured to determine the values of data on (e.g.,read), or to determine the values of data to be written to, the memorycells 404 using the first data lines 410. For example, in a selectedstring of memory cells 404, one or more of the sense amplifiers 420 canread a logic level in the selected memory cell 404 in response to a readcurrent flowing in the memory array 402 through the selected string tothe data lines 410.

One or more devices external to the memory device 400 can communicatewith the memory device 400 using the I/O lines (DQ0-DQN) 408, addresslines 416 (A0-AX), or control lines 432. The input/output (I/O) circuit426 can transfer values of data in or out of the memory device 400, suchas in or out of the page buffer 422 or the memory array 402, using theI/O lines 408, according to, for example, the control lines 432 andaddress lines 416. The page buffer 422 can store data received from theone or more devices external to the memory device 400 before the data isprogrammed into relevant portions of the memory array 402, or can storedata read from the memory array 402 before the data is transmitted tothe one or more devices external to the memory device 400.

The column decoder 414 can receive and decode address signals (A0-AX)into one or more column select signals (CSEL1-CSELn). The selector 424(e.g., a select circuit) can receive the column select signals(CSEL1-CSELn) and select data in the page buffer 422 representing valuesof data to be read from or to be programmed into memory cells 404.Selected data can be transferred between the page buffer 422 and the I/Ocircuit 426 using second data lines 418.

The memory control unit 430 can receive positive and negative supplysignals, such as a supply voltage Vcc 434 and a ground potential Vss436, from an external source or supply (e.g., an internal or externalbattery, an AC-to-DC converter, etc.). In certain examples, the memorycontrol unit 430 can include a regulator 428 to internally providepositive or negative supply signals.

In various examples, a row decoder of a memory device, such as the rowdecoder 412 of FIG. 4, may include high-voltage (HV) shifters configuredto translate supply voltage of specific magnitudes to access lines(e.g., a global word line (GWL)) of memory cells. FIG. 5 is a blockdiagram illustrating an example of prior art word line (WL) drivers501A-501N in a row decoder. The WL drivers 501A-501N can be provided forall of the WLs 550 in a block. Each WL driver can include a HV shifterto couple one of several possible voltages to a respective WL toprogram, erase, or read the memory cells in the respective row. TakingWL driver 501A as an example, each WL driver can include several voltagenodes 512-528 configured to receive a supply voltage having a respectivemagnitude. The voltage nodes 512-528 are coupled to the respective WL550 through a switch 520 enabled in accordance with the operation of theselected row of memory cells. The switches 520 can be NMOS transistorscontrolled by a HV shifter 510, such as a charge pump circuit (notshown) or by other means known to one skilled in the art. When enabled,the HV shifter 510 provides a voltage to turn ON the transistor switch520 and couple the respective voltage nodes 512-528 to the selected WL550. Additionally, each WL driver can include a standby switch 562 and avoltage discharge circuit 564 coupled to the WL 550. The standby switch562 is enabled when the memory block is inactive, and disabled when thememory block receives a command for a memory operation. The voltagedischarge circuit 564, which conventionally includes a high impedancefor causing any voltage capacitively stored on the respective WL 550,including voltage stored on capacitors coupled to the WL 550 such as acapacitor 515, to be discharged after a memory operation is complete toprepare for the next command.

The WL driver 501 includes a program block 502 to apply a programmingvoltage to one of the WL 550 selected for programming during aprogramming operation, a read block 506 to apply one of several readvoltages to a WL 550 selected for reading during a read operation, andan enable block 504 to apply one of two enable voltages to anon-selected WL 550 during either a programming or reading operation.The program voltage supplied by the program block 502 must besufficiently large to store charge on the floating gate when theselected memory cell is programmed. When the switch 520 is enabled, theprogram node 512 is serially connected to a resistor 513 and a capacitor515, which in combination act as a low pass filter 511 that filters thesupplied voltage before the voltage is applied to the WL 550. The lowpass filter 511 is used as a delay element to minimize disturbances dueto WL-to-WL coupling when the signal applied to the WL 550 transitionsto a high voltage level or a low voltage level. During the programoperation, the enable block 504 applies a program enable voltage fromthe program enable node 514 to a respective one of the WLs 550 that isnot selected for programming. As described above, a voltage sufficientto turn on all the unselected memory cells 14 must be applied to the WLs550 of the other rows to program the selected row.

Similarly, during a read operation, the read block 506 applies a readvoltage to a respective WL 550 that is selected for reading. Since thememory cell is capable of storing multiple bits of data at multiplelevels of charge on its floating gate, several read voltages are madeavailable through one or more bias voltage nodes 524-528. During theread operation, the enable block 504 applies a read enable voltage fromthe read enable node 516 to a respective one of the WLs 550 if the WL isnot selected for reading to turn on the memory cells 14 of thenon-selected rows as previously described.

As mentioned above, respective WL drivers 501A-501N are provided for allof the WLs 550 in a block. For example, for a block containing 32 rowsof memory cells, 32 WL drivers 501 must be provided. The area on asemiconductor die that must be devoted to such WL drivers is furtherincreased by the use of the multilevel memory cell in the flash memoryblock, since more voltage levels must be supplied by each of the WLdrivers as more bits are stored in the memory cells. Specifically, eachadditional voltage that is supplied requires an additional voltage nodeto incorporate in the WL driver 501 circuitry or by some othercircuitry. Therefore, as the number of read voltages supplied to theselect memory cells increases, each of the drivers 501 requireadditional circuitry. Therefore, the memory chip must accommodate agreater number of the larger drivers 501, resulting in a large chiplayout area and a large die size. The large number of components canrequire a significant amount of area on a semiconductor die, thusincreasing the cost of non-volatile memory devices having row decodersthat use the WL drivers 501. Therefore, there has been an unmet need fora non-volatile memory device and method that reduces the circuit size ofthe WL drivers 501 to reduce the overall memory chip layout area and diesize.

As previously discussed, one challenge in the HV shifter design isdegradation of sensitive transistors due to substantial gate-to-channelstress applied thereto. Compensation of such degradation typicallyrequire a large number of transistors in the HV shifter, which take morechip area and increase HV shifter complexity and cost. By way ofexample, FIG. 6 is a schematic diagram illustrating a prior art HVshifter 600 used for translating an input voltage received from an inputport to an output port coupled to one or more access lines, such as aGWL or a WL in a block, to selectively read, program, or erase memorycells.

The HV shifter 600 includes a low-voltage control circuit 610, acompensator circuit 620, and a signal transfer circuit 630. Thelow-voltage control circuit 610 includes low-voltage transistors,including for example, PMOS transistors 612, 615, and 616, and NMOStransistors 611, 613, and 614. A supply voltage Vcc and a shifterenabling signal “enable” can be applied to the low-voltage controlcircuit 610 to control the conduction of the transport circuit 630, andthereby the output voltage of the HV shifter 600. In particular, the“enable” signal is connected to the gates of the NMOS 611 and of thePMOS 612 that constitute an inverter. The NMOS 611 has a sourceconnected to a ground potential Vss, and the PMOS 612 has a sourceconnected to a supply voltage Vcc. The output of said inverter, forminga node 618, is connected to the gates of the NMOS 614 and of the PMOS615. The PMOS 615 has a source connected to Vcc. and a drain connectedto the drain of NMOS 614. A compensator-enabling signal“HVP_protect_enn” is coupled to the gates of the NMOS 613 and of thePMOS 616 to control the delivery of a compensation signal, generated bythe compensator circuit 620, to the signal transfer circuit 630. ThePMOS 616 has a source connected to Vcc. and a drain connected to thedrain of the NMOS 614. The PMOS 615, NMOS 614, and NMOS 613 are seriallyconnected and coupled between Vcc and Vss.

The compensator circuit 620 includes high-voltage transistors, such as apair of high-voltage NMOS transistors HVD 621A and HVD 621B each havinga negative threshold voltage (Vth), high-voltage NMOS transistors HVN623 and HVN 651 each having positive Vth, and a high-voltage PMOStransistor (HVP) 622. The HVD 621A and 621B have a Vth of approximately−1.5V. The HVN 623 and 651 are normal high-voltage NMOS transistors eachhaving a positive Vth of approximately 0.8V. The HVP 622 has a positiveVth of approximately 1.5V. A high-voltage support signal “HV_support”can be supplied to the drains of the HVD 621A-621B. The sources of HVD621A-621B are connected to the source of the serially connected HVP 622.The HV_support, through the HVD 621A-621B and HVP 622, provides acompensation signal to the signal transfer circuit 630 to compensate fortransistor degradation therein.

The signal transfer circuit 630 can include a pair of high-voltage NMOStransistors (HVD) 631A and 631B each having a negative threshold voltage(Vth), and a HVP 641 serially connected to the HVD 631A-631B and coupledbetween a high-voltage input signal “HV_input” and an output node“HV_output.” The HVD 631A-631B each have a Vth of approximately −1.5V.The HVP 641 has a positive Vth of approximately 1.5V. The drains of HVD631A-631B are coupled to the HV_input signal. The drain of HVP 641 isconnected to HV_output. The signal transfer circuit 630 couples thecompensation signal to HVP 641 to compensate for degradation associatedwith an elevated threshold voltage (Vth) of HVP 641, due to thesubstantial gate-to-channel stress. Degradation can occur when atransistor, such as a high-voltage PMOS transistor (HVP) 641, operatesunder a high-voltage gate-to-channel stress. A representation oftransistor degradation is an increased threshold voltage (Vth). With theincreased Vth, the degraded transistor (e.g., HVP 641) may not be ableto fully transfer the high input voltage (HV_input) to the output(HV_output) of the HV shifter, and then to the access lines (e.g., GWLsor WLs) to selectively operate on the memory cells. For example, in theabsence of degradation, a biasing voltage of Vcc less the Vth of ahigh-voltage NMOS transistor (HVD) 631A or 631B (that is, Vcc−1.5V) maybe sufficient to cause the HVD 631A-631B and HVP 641 conductive, due tothe negative threshold voltages of HVD 631A-631B and of HVP 641 (whichare approximately −1.5V). Keeping a relatively lower biasing voltage isdesirable to protect the low-voltage transistors in the low-voltagecontrol circuit 610 from breakdown. However, when HVP 641 becomesdegraded and the Vth of HVP 641 has increased, the biasing voltageVcc−1.5V would not be high enough turn on HVD 631A-631B and HVP 641 toreliably transfer full input voltage to the output port. As such, tocompensate for degradation of HVP 641, a higher gate voltage may berequired to operate the degraded transistor.

FIG. 7 is a timing diagram illustrating an operation of the HV shifter600, including the voltage level shifting and compensation of transistordegradation. Initially during the standby state, the shifter enablingsignal “enable” is set to high at Vcc. The “enable” signal is coupled tothe gate of the NMOS 611 and the PMOS 612 of the low-voltage controlcircuit 610, turning on NMOS 611 and shutting off PMOS 612. Node 618,and node_A, connected to the drain of NMOS 611, are pulled to a groundpotential Vss. The transistor HVN 623 has its gate connected to Vcc anddrain connected to node_A. As HVN 623 conducts, node_C, which isconnected to the source of HVN 623, is also low (Vss). Node_A isconnected to the gate of HVD 621A, and node_C is connected to the gateof HVD 621B. When both node-A and node_C are low, HVD 621A-621B do notconduct. The sources of HVD 621A-621B, connected to node_B, aredisconnected from HV_support connected to the drains of HVD 621A-621B.HVP 622 has a gate connected to “enable” (at a level of Vcc), thus doesnot conduct. As such, node_B stays at ground potential Vss.

Node-C is connected to the gate of HVD 631A-631B. The ground potentialVss at node_A is transferred to HV_ouput via a high-voltage NMOStransistor (HVN) 651 that conducts. The transferred low voltage isapplied to the gate of HVD 631B. Because both node_A and node-C are low,HVD 631A-631B are not conducting. Node_D, connected to the sources ofHVD 631A-631B, is disconnected from HV_input; therefore, node_D stays atground Vss. The low voltage at node 618, connected to a gate of PMOS615, turns on PMOS 615, setting node_E (connected to the drain of PMOS615) to a logic high at Vcc.

At time T0, the “enable” signal is flipped to low (the ground potentialVss) to enable the HV shifter. NMOS 611 is turned off and PMOS 612 isturned on, and node_A is raised to high at Vcc. HVD 621A thus conducts.As the HVD 621A has a negative threshold voltage (approximately −1.5V),the source of HVD 621A, connected to node_B, thus is raised to Vcc+1.5V.This is shown as the first voltage rise at node_B. HVP 622 conducts dueto low gate voltage (connected to “enable”), which brings node_C tofollow node_B, shown as the first voltage rise at node_C to Vcc+1.5V.The gates of HVD 621A-621B are connected to node_A and node_C,respectively. HVD 621A-621B each have a negative threshold voltage (Vth,approximately −1.5V). As HVD 621A-621B conduct, the sources of HVD621A-621B (connected to node_D) is raised to a level of higher than thegate voltage (connected to node_C) by 1.5V. As node_C is Vcc+1.5V, thevoltage at node_D is approximately Vcc+3V.

The high voltage at node_A is connected to the gate of NMOS 614 to turnon NMOS 614. At this time, the compensator-enabling signalHVP_protect_enn is set to high, turning on the NMOS 613. Therefore,node_E is at a ground potential Vss. HVP 641 has its gate connected tonode_E, therefore conducts. Node_D is connected to the source of HVP641, and HV_output is connected to the drain of HVP 641. The outputvoltage HV_ouput therefore follows node_D, reaching a potential ofapproximately Vcc+3V.

As HVD 621A-621B conduct, HV_support can be transferred down the path inthe compensator circuit 620. From time T1, the voltage at node_B risesfrom Vcc+1.5V until HV_support is fully transferred, and raise node_B toHV_support. As HVP 622 still conducts, node_C follows node_B to rise toHV_support. This is shown in FIG. 7 as the second voltage rise at node_Cand node_D to HV_support. As previously discussed, HVD 631A conducts,resulting in voltage of node_D (connected to the source of HVD 631A)being higher than the voltage at node_C (connected to the gate of HVD631A) by Vth of HVD 631A. Therefore, when node_C rises from Vcc+1.5V toHV_support, node_D accordingly rises from Vcc+3.0V to HV_support+1.5V.The output voltage HV_ouput, via the conducted HVP 641, follows node_Dvoltage to rise to HV_support+1.5V. This is shown as the second voltagerise at node_D and HV_output to HV_support+1.5V.

As HVD 631A-631B conduct, HV_input can be transferred to down the pathat the signal transfer circuit 630 node_D. Following a latency periodwhen node_D reaches HV_support+1.5V, at time T2, the voltage at node_Dcan further rise from HV_support+1.5V until HV_input is fullytransferred to node_D at time T3. The output voltage HV_ouput followsnode_D voltage to rise to HV_input. This is shown as the third voltagerise at node_D and HV_support to HV_input.

HV_input can be selected according to memory cell operations. Forexample, when the HV shifter 600 is used to supply the HV_output to aword-line (e.g., a GWL) to read or program a memory cell, HV_input canbe approximately 7-10V for reading a memory cell, or approximately20-30V for programming a memory cell.

Transferring the high voltage HV_input through HVP 641 to HV_ouput tofulfill various high-voltage operations on the memory cells may subjectHVP 641 to high-voltage “gate-to-channel” stress. This may elevate thethreshold Vth and degrade the performance of HVP 641. FIG. 7 illustratesa solution to release the stress on HVP 641. After a prolonged voltagetransfer through HVP 641, at time T4, HVP_protect_enn is reset to low atVss. PMOS 616, with its base connected to HVP_protect_enn and drainconnected to node_E, conducts and raises the drain (and thus node_E)voltage to Vcc. The Vcc supplied to the gate of HVP 641 can relax thestress due to high-voltage transfer.

The prior art HV shifter 600 has several disadvantages. First, asillustrated in FIG. 7, after HV_input has been fully transferred toHV_output through HVP 641, the gate of HVP 641 (at node_E) is switchedto Vcc for the purpose of relaxing the stress applied to HVP 641.However, even with such relaxing, as HV_input remains to be high (e.g.,approximately 30V), HVP 641 can continue degrade due to very highHV_input applied to HVP 641. Second, the HV shifter 600 comprises alarge amount of high-voltage transistors, which take a lot of space andresult in a large die size. To combat PMOS degradation, the compensatorcircuit 620 is included to compensate for the increased thresholdvoltage of HVP (e.g., HVP 641). Although HV_support higher than Vcc isable to turn on the degraded HVP 641 with an elevated Vth, thecompensator circuit 620 comprises many high-voltage transistors (HVN623, HVD 621A-621B, and HVP 622), which can increase the size,complexity, and cost of the HV shifter. Some of these high-voltagetransistors are vulnerable to gate-to-channel stress particularly athigh HV_support. As such, HV_support in HV shifter 600 is usuallydesigned to be low enough (e.g., approximately 7V in an example) not todegrade HVP. Third, conventional HV shifters, such as the shifter 600,lacks resource sharing and may results in a large chip size. In a 3DNAND memory chip, there are usually many high-voltage sources and manyword-lines. As illustrated in FIG. 5, each WL driver (for driving aparticular WL) requires a number of dedicated HV shifters. Eventually, alarge number of HV shifters need to be implemented in a chip, which maysubstantially increase the chip size. For at least foregoing reasons,there is a need for a HV shifter with improved performance ofcompensating, or reducing, degradation of a transistor such as ahigh-voltage, while at the same time reducing the circuit size andcomplexity of the HV shifter, such that the overall chip layout area anddie size can be reduced.

FIG. 8 is a schematic diagram illustrating an example of HV shifter 800with reduced transistor degradation, according to one embodiment thesubject matter discussed herein. The HV shifter 800 improves over theprior art HV shifter 600 with more effective protection againstdegradation of a transistor (e.g., HVP 641) using substantially fewertransistors, and can therefore reduce the size and complexity of the HVshifter.

The HV shifter 800 can include a low-voltage control circuit 810, atransistor protector circuit 820, and a signal transfer circuit 830. Thelow-voltage control circuit 810 is an improved variant of thelow-voltage control circuit 610 of FIG. 6. Among other things,low-voltage transistors 613 and 616, and the compensator-enabling signalinput HVP_protect_enn, are removed from the low-voltage control circuit810. Protection of the PMOS against degradation can instead be fulfilledby the transistor protector circuit 820, which replaces the compensatorcircuit 620 of the HV shifter 600 in FIG. 6. The transistor protectorcircuit 820 includes two control voltage signals HV_contorl_1 andHV_contorl_2 and a high-voltage support signal HV_support. TheHV_contorl_1 signal can be coupled to a gate of a high-voltage NMOStransistor (HVN) 821. The HV_control_2 signal can be coupled to a gateof another HVN 822. The HV_support signal can be connected to the drainof the HV 822. HVN 821 and HVN 822 take the place of the five HVtransistors (HVD 621A-621B, HVN 623, HVP 622, and HVD 631A) of thecompensator circuit 620 of the HV shifter 600 in FIG. 6. In contrast tothe compensator circuit 620 that compensates for transistor (e.g., HVP641) degradation that has occurred (e.g., an increased threshold voltageof HVP 641) via the HV_support, the transistor protector circuit 820 canbe configured to protect the HV transistor (e.g., HVP 641) of the signaltransport circuit 830 against degradation, as to be discussed in thefollowing.

The HV_contorl_1 and HV_contorl_2 signals may be generated usingrespective control signal generators. The HV_support signal may begenerated by a support signal generator. These signal generators can belocated in periphery area of a chip. Examples of said signal generatorsare discussed below, such as with reference to FIGS. 9A-9C. Because thetransistor protector circuit 820 uses less transistors (e.g., only HVN821 and 822) than the compensator circuit 620, overall size of a chipcan be substantially reduced.

The signal transfer circuit 830 is a variant of the signal transfercircuit 630 of the HV shifter 600 in FIG. 6. The signal transfer circuit830 can include a high-voltage NMOS transistor HVD 631B and HVP 641serially connected and coupled between the high-voltage input “HV_input”and the output “HV_output”. The drain of HVD 631B is connected toHV_input, and the drain of HVP 641 is connected to HV_output. TheHV_input signal can be transferred to HV_output via HVD 631B and HVP641. The signal transfer circuit 830 can also be connected to thetransistor protector circuit 820 to protect against degradation of HVP641 associated with an elevated threshold voltage (Vth), such as due tothe gate-to-channel stress imposed by high voltages applied to the ofHVP 641 during voltage transfer.

FIGS. 9A-9C are diagrams illustrating examples of the signal generatorsfor generating control signals (HV_control_1 and HV_control_2) andstress-relief signal (HV_support) for reducing PMOS degradation in a HVshifter. These signal generators can each include respectivehigh-voltage multiplexers (MUX's) configured to select between a highvoltage source of a specified voltage and a ground potential Vss, andcouple the selected voltage to the respective components of thetransistor protector circuit 820. The high-voltage source may include acharge pump or an external power supply configured to provide a voltageof specified magnitude. In particular, FIG. 9A illustrates a firsthigh-voltage control circuit (HVC1) 910 that can generate a firstcontrol signal HV_control_1, selected between a first high voltagesource HV1 and Vss, via respective switches/transistors 912 and 914. Thevoltage source HV1 can be a charge pump or an external power source. Inan example. HV1 is approximately 5V. During a standby state, theswitch/transistor 912 conducts, setting the HV_control_1 to a voltagelevel of HV1. This high voltage can be used to transfer full Vcc to HVP641. FIG. 9B illustrates a second high-voltage control circuit (HVC2)920 that can generate a second control signal HV_control_2, selectedbetween a second high voltage source HV2 (e.g., a charge pump or anexternal power source) and Vss via respective switches/transistors 922and 924. In an example, HV2 is approximately 20V. During standby state,the switch/transistor 922 conducts, setting the HV_control_2 to avoltage level of HV2. In an example, HV2 is approximately 20V. This highvoltage can be used to transfer the stress-relief signal HV_support(which is approximately at a level of HV3) to HVP 641. FIG. 9Cillustrates a high-voltage support circuit (HVS) 930 that can generate astress-relief signal HV_support, selected between a second high voltagesource HV3 (e.g., a charge pump or an external power source) and Vss viarespective switches/transistors 932 and 934. In an example, thestress-relief signal is approximately 15V. During a standby state, theswitch/transistor 932 conducts, connecting the source HV3 to HV_support.This high voltage can be used to relax the gate-to-channel stress.

FIG. 10 is timing diagram 1000 illustrating an operation of a selectedHV shifter. A shifter can be selected by setting the “enable” signal toa ground potential Vss. During an initial standby state, the “enable”signal is placed at a logic high potential (Vcc), such that no HVshifter is activated. The control signal HV_control_1 is set to HV1 viathe HVC1 910. HV_control_2 and HV_support are both set to Vss via theHVC2 920 and the HVS 930, respectively. As “enable” is high, NMOS 611conducts and PMOS 612 does not conduct. The voltage at node 618 is at apotential of Vss, thus PMOS 615 conducts and NMOS 614 does not conduct,pulling the voltage at node 812 to a level substantially equal to Vcc.The voltage at 812 is a bias voltage for biasing HVP 641 during thestandby state. The gate of HVN 821 is controlled by HV_control_1. TheHV1 (e.g., approximately 5V) at HV_control_1 causes HVN 821 to conduct,and the bias voltage at node 812 can be transferred to node_A, raisingthe voltage at node_A to approximately Vcc. The sufficiently highvoltage HV1 at HV_control_1 can ensure that full Vcc is transferred tonode_A during the standby state. Meanwhile. NMOS 611 and HVN 651 bothconduct, and the gate of HVD 631B is low at Vss. As a result, the sourceof HVD 631B, which is connected to node_B, is floating at approximately1.5V due to the negative threshold (approximately −1.5V) of HVD 631B.Because HVN 651 still conducts, the ground potential Vss at node 618 istransferred to the source of HVN 651, setting HV_output to Vss.

At T0, the “enable” signal is flipped to low to select a shifter ofinterest. The three high-voltage supplies (HV_control_1, HV_control_2,and HV_support) remain unchanged. The low “enable” signal causes PMOS612 to conduct and NMOS 611 to close, thereby setting node 618 to alogic high level. This causes PMOS 615 not to conduct, and NMOS 614 toconduct, bringing node 812 to substantially a ground potential Vss.Because the HV_control_1 is set to HV1 and conducts HVN 821, node_Afollows the voltage at node 812, and falls to the ground potential Vss.HVP 641, with its gate connected to node_A, then conducts. This causesthe HV_output (connected to the drain of HVP 641) to rise in a mannersimilar to the voltage at node_B. The high voltage at node 618 istransferred to the gate of HVD 631B through the conducted HVN 651. HVD631B thus conducts, and transfers the input voltage HV_input to thesource of HVD 631B and node_B. Through the conducted HVP 641, thehigh-voltage input HV_input can be transferred to the output port atHV_output. As such, node_B and HV_output both rise until fully reach avalue substantially equal to HV_input.

After a specific time period (T_control) that has elapsed from T0, attime instant T1 the control signal HV_control_1 can be switched to theground potential Vss via the HVC1 910. In an example, the output voltageHV_output can be monitored, and HV_control_1 can be switched from Vcc toVss in response to the monitored HV_output reaching substantially theinput voltage HV_input, the time (T2) at which marks the end ofT_control. Following a fall-time of approximately 0.3-0.5 microsecondfor the HV_control_1 signal to fall down to Vss, at T2, the otherhigh-voltage source HV_control_2 can be switched to the high-voltagesupply HV2 (e.g., approximately 20V) via the HVC2 920, and HV_supportcan be switched to the high-voltage supply HV3 (e.g., approximately 15V)via the HVS 930. The sufficiently high HV2, when applied to the gate ofHVN 822, can cause HVN 822 to conduct and ensure full transfer of theHV_support voltage (which is set to HV3 at the moment) to node_A.

The high voltage (HV3) that is transferred to node_A is applied to thegate of HVP 641, and can put a lot of stress on HVP 641. The HV shifter800 is brought into a high-stress state. At this time, node_B (connectedto the source of HVP 641) and HV_output (connected to the drain of HVP641) are both at HV_input. The high stress state can last for aspecified time period T_high_stress, during which the HV shifter 800 isactivated, and the HV_ouput is being supplied to an access line, such asa WL or a GWL. The transferred high voltage can be used to selectivelyprogram, erase, or read the one or more memory cells in the memorydevice. The HV shifter 800 remains active (with the WL and GWL beingcharged by HV_output to fulfil specified operations on the memorycells), until at T3 the operation is completed and the “enable” signalis reset to Vcc. The three high voltage sources are reset to theirrespective standby state: HV_control_1 is set to HV1, and HV_control_2and HV_support are both set to ground potential Vss. High voltage at HVP641 is then released. Consequently. Node_A flips back to Vcc, and Node_Bis discharged through HV_output, which goes to a logic low (the groundpotential Vss). The gate of HVP is Vcc (node_A). Because Vth of HVP 641is −1.5 v, node_B cannot go lower than Vcc+1.5V. HV_output falls back toVss.

FIG. 11 is timing diagram 1100 illustrating an operation of anunselected HV shifter. To unselect a shifter, the “enable” can bemaintained at a logic high level (e.g., Vcc). The high-voltage controlsignals HV_control_1 and HV_contorl_2, and the HV_support signal, can beoperatively coupled to the HV shifter 800 using, respectively, the HVC1910, HVC2 920, and HVS 930, in a manner similar to selected shifter asdiscussed above with reference to FIG. 10. Note that since “enable”signal stays high for the unselected shifter, no events (e.g., logicstate change at one or more components or nodes) would occur duringT_control. For example, voltage at node 812, and the voltage at node_A,do not flip to Vss (as is the case for the selected HV shifter, as shownin FIG. 10) due to the “enable” signal is maintained at Vcc until timeT1. T_control is shown in FIG. 11 merely for the purpose of comparing tothe events timing of a selected shifter as illustrated in FIG. 10.

At T1, HV_contorl_1 is switched from HV1 to the ground potential Vss viathe HVC1 910. As discussed above for the selected shifter in referenceto FIG. 9, following a 0.3-0.5 μs delay from T1, the voltage sourcesHV_control_2 and HV_support can be flipped to respective high voltagesHV2 and HV3. The sufficiently high HV2 applies to the gate of HVN 822 toensure full transfer of the HV_support (at a level of HV3) to node_A.The gate of HVP 641, which is connected to node_A, is simply raised upto HV_support (at a level of HV3) in the unselected HV shifter. The highlevel of HV_support (HV3) at node_A can put a lot of stress on HVP 641.This brings the HV shifter to a high stress state. As shown in FIG. 11,for an unselected HV shifter, Node_B and the HV_output have a voltageprofile different from the counterpart of the selected HV shifter asshown in FIG. 10. Because the “enable” signal stays high at Vcc, NMOS611 conducts and HV_output stays at a logic low level Vss throughout.Node_B stays at floating 1.5V, due to the negative threshold voltage ofHVD 631B (approximately −1.5V).

Compared to the HV shifter 600, the HV shifter circuit 800 has severaladvantages. First, it leads to a reduction in the silicon area occupiedby the HV shifter circuit. As shown in FIG. 8, many transistors in theHV shifter 600 can be eliminated (e.g., low-voltage NMOS 613 and 616,and HV transistors 621A-621B, 623, 622, and 631A). A single HV shifter800 can be shared by multiple memory cell array blocks, thereby reducingthe chip layout area. In some examples, the transistor protector circuit820, including the signal generators HVC1, HVC2, HVS for generating,respectively, the high-voltage signals HV_control_1, HV_control_2, andHV_support, can be placed on periphery area of a chip, and placed onlyonce in a chip and shared by multiple memory cell array blocks.Accordingly, overall size of a chip can be much smaller. Second, the HVshifter 800 provides for a more efficient HV level shifting circuit andmethod that can effectively protect against degradation of HVtransistors in the shifter circuit. In conventional HV shifters,HV_support is used to compensate for transistor degradation in thesignal transfer circuit 630. HV_support is typically set to a high level(higher than Vcc) sufficient to operate the degraded HVP 641 with anelevated Vth. Such an HV_support can cause further degradation of HVP641 over time. In the HV shifter 800, since HV_support is directlysupplied to the gate of HVP 641 (via HVN 822), the degradation of HVP641 due to high-stress can be easily controlled via the HV_support. Sucha flexibility of setting HV_support voltage can be beneficial inreducing HVP degradation. For example, in contrast to HV sifter 600where the HV_support is limited to be low enough to avoid degrading HVP,in HV shifter 600 very high HV_support can be applied, as long as theHV_input exceeds the HV_support by approximately 2V, which is just abovethe threshold voltage of HVP 641 (approximately 1.5 V). The transistorprotector circuit 820 enables a useful technique of linking theHV_support to HV_input, such that when HV_input is increased, HV_supportcan be adjusted accordingly. In an example, HV_support voltage can beincreased proportionally to an increase in HV_input to keep thegate-to-channel stress level under control, thereby relieving orreducing the stress on HVP 641, increasing its threshold, and degradesthe voltage translating performance.

FIG. 12 is a flow chart illustrating a method 1200 of addressingdegradation of a transistor, such as a PMOS transistor, in a HV shifterthat is used to level-shift a digital signal from one power supply toanother in a memory device according to one embodiment discussed herein,such as via the HV shifter circuit 800 of FIG. 8. Although the blocks inthe method 1200 are shown in a particular order, the order of thesesteps can be modified. Thus, the illustrated embodiments can beperformed in a different order, and some actions/blocks may be performedin parallel. Additionally, one or more actions/blocks can be omitted invarious embodiments of level-shifting an input signal from one powersupply level to another, such as by using the HV shifter 800. Theflowchart of FIG. 12 is illustrated with reference to the embodiments ofFIGS. 8-11. In an example, the method 1200 may be implemented in andexecuted by the HV shifter circuit 800, or embodiments or variantsthereof, as discussed above.

The method 1200 commences at 1210 to generate a first control signal tocontrollably couple a bias voltage to a P-channel transistor in of a HVshifter. The P-channel transistor can be a high-voltage PMOS transistor(such as HVP 641) serially connected to an N-channel transistor (such asHVD 631B) in a signal transfer circuit 830, which is connected betweenan input port for receiving a high-voltage input and an output port forproviding the transferred voltage to an access line, as illustrated inFIG. 8. The first control signal may be generated using the HVC1 910 ofFIG. 9A, which can selectively couple to a charge pump or an externalpower source to provide the first control signal. In an example, thefirst control signal is approximately 5V. This value of the firstcontrol signal can reliably cause a switch transistor (HVN 821) toconduct, such that the bias voltage can be transferred to the P-channeltransistor. In an example, the bias voltage has a value of the supplyvoltage Vcc. The bias voltage at a level of approximately Vcc may beapplied to the P-channel transistor for a specified first time periodT_control. In an example, T_control can be a predetermined time period.In another example, an output voltage HV_output at the output port canbe monitored. The first time period T_control ends at a time when themonitored HV_output reaches substantially the input voltage HV_input.

At 1220, at the end of the first time period T_control, the firstcontrol signal can be switched from 5V to a low level of groundpotential Vss, such that the bias voltage of Vcc can be decoupled fromthe P-channel transistor, and a ground potential Vss can be coupled tothe P-channel transistor. Following a specified switching delay ofapproximately 0.3-0.5 microsecond from the end of the first time period,at 1230, a second control signal may be generated, such as using theHVC2 circuit 920, to controllably couple a stress-relief signal to theP-channel transistor. The switching delay is to account for fall-time ofHVC1 910 from its initial 5V to a level of Vss. The stress-relief signalcan be generated by the HVS circuit 930 of FIG. 9C. In an example, thestress relief signal is substantially 15 Volts. In an example, thesecond control signal is a high-voltage signal of approximately 20V. Thestress relieve signal and the second control signal can each becontrollably coupled to a charge pump or an external power source,controlled respectively by the HVS circuit 930 and the HVC2 circuit 920.The second control signal is high enough (20V) to cause HVN 822 toconduct, and to ensure full transfer of the stress-relief signal of 15Vto the P-channel transistor. The serially connected HVD 631B and HVP 641of the signal transfer circuit remains conducted, and the output voltageHV_output can rise and maintain at a level substantially equal toHV_input.

At 1240, one or more access lines may be charged up by transferring thehigh-voltage input to the access line. The access line, such as a wordline (WL) or a global word line (GWL), may be coupled to one or more ofthe group of memory cells. By charging the WL or GWL to desired voltage,one or more of the group of memory cells may be selectively read,programmed, or erased, among other memory cell operations.

FIG. 13 illustrates a block diagram of an example machine 1300 uponwhich any one or more of the techniques (e.g., methodologies) discussedherein may perform. In alternative embodiments, the machine 1300 mayoperate as a standalone device or may be connected (e.g., networked) toother machines. In a networked deployment, the machine 1300 may operatein the capacity of a server machine, a client machine, or both inserver-client network environments. In an example, the machine 1300 mayact as a peer machine in peer-to-peer (P2P) (or other distributed)network environment. The machine 1300 may be a personal computer (PC), atablet PC, a set-top box (STB), a personal digital assistant (PDA), amobile telephone, a web appliance, an IoT device, automotive system, orany machine capable of executing instructions (sequential or otherwise)that specify actions to be taken by that machine. Further, while only asingle machine is illustrated, the term “machine” shall also be taken toinclude any collection of machines that individually or jointly executea set (or multiple sets) of instructions to perform any one or more ofthe methodologies discussed herein, such as cloud computing, software asa service (SaaS), other computer cluster configurations.

Examples, as described herein, may include, or may operate by, logic,components, devices, packages, or mechanisms. Circuitry is a collection(e.g., set) of circuits implemented in tangible entities that includehardware (e.g., simple circuits, gates, logic, etc.). Circuitrymembership may be flexible over time and underlying hardwarevariability. Circuitries include members that may, alone or incombination, perform specific tasks when operating. In an example,hardware of the circuitry may be immutably designed to carry out aspecific operation (e.g., hardwired). In an example, the hardware of thecircuitry may include variably connected physical components (e.g.,execution units, transistors, simple circuits, etc.) including acomputer readable medium physically modified (e.g., magnetically,electrically, moveable placement of invariant massed particles, etc.) toencode instructions of the specific operation. In connecting thephysical components, the underlying electrical properties of a hardwareconstituent are changed, for example, from an insulator to a conductoror vice versa. The instructions enable participating hardware (e.g., theexecution units or a loading mechanism) to create members of thecircuitry in hardware via the variable connections to carry out portionsof the specific tasks when in operation. Accordingly, the computerreadable medium is communicatively coupled to the other components ofthe circuitry when the device is operating. In an example, any of thephysical components may be used in more than one member of more than onecircuitry. For example, under operation, execution units may be used ina first circuit of a first circuitry at one point in time and reused bya second circuit in the first circuitry, or by a third circuit in asecond circuitry at a different time.

The machine (e.g., computer system) 1300 (e.g., the host device 105, thememory device 110, etc.) may include a hardware processor 1302 (e.g., acentral processing unit (CPU), a graphics processing unit (GPU), ahardware processor core, or any combination thereof, such as the memorycontroller 115, etc.), a main memory 1304 and a static memory 1306, someor all of which may communicate with each other via an interlink (e.g.,bus) 1308. The machine 1300 may further include a display unit 1310, analphanumeric input device 1312 (e.g., a keyboard), and a user interface(UI) navigation device 1314 (e.g., a mouse). In an example, the displayunit 1310, input device 1312 and UI navigation device 1314 may be atouch screen display. The machine 1300 may additionally include a signalgeneration device 1318 (e.g., a speaker), a network interface device1320, and one or more sensors 1316, such as a global positioning system(GPS) sensor, compass, accelerometer, or other sensor. The machine 1300may include an output controller 1328, such as a serial (e.g., universalserial bus (USB), parallel, or other wired or wireless (e.g., infrared(IR), near field communication (NFC), etc.) connection to communicate orcontrol one or more peripheral devices (e.g., a printer, card reader,etc.).

The machine 1300 may include a machine readable medium 1322 on which isstored one or more sets of data structures or instructions 1324 (e.g.,software) embodying or utilized by any one or more of the techniques orfunctions described herein. The instructions 1324 may also reside,completely or at least partially, within the main memory 1304, withinstatic memory 1306, or within the hardware processor 1302 duringexecution thereof by the machine 1300. In an example, one or anycombination of the hardware processor 1302, the main memory 1304, or thestatic memory 1306 may constitute the machine readable medium 1322.

While the machine readable medium 1322 is illustrated as a singlemedium, the term “machine readable medium” may include a single mediumor multiple media (e.g., a centralized or distributed database, orassociated caches and servers) configured to store the one or moreinstructions 1324.

The term “machine readable medium” may include any medium capable ofstoring or encoding instructions for execution by the machine 1300 andthat cause the machine 1300 to perform any one or more of the techniquesof the present disclosure, or capable of storing, encoding or carryingdata structures used by or associated with such instructions.Non-limiting machine readable medium examples include solid-statememories, and optical and magnetic media. In an example, a massedmachine readable medium comprises a machine-readable medium with aplurality of particles having invariant (e.g., rest) mass. Accordingly,massed machine-readable media are not transitory propagating signals.Specific examples of massed machine readable media may include:non-volatile memory, such as semiconductor memory devices (e.g.,Electrically Programmable Read-Only Memory (EPROM), ElectricallyErasable Programmable Read-Only Memory (EEPROM)) and flash memorydevices; magnetic disks, such as internal hard disks and removabledisks; magneto-optical disks; and CD-ROM and DVD-ROM disks.

The instructions 1324 (e.g., software, programs, an operating system(OS), etc.) or other data are stored on the storage device 1321, can beaccessed by the memory 1304 for use by the processor 1302. The memory1304 (e.g., DRAM) is typically fast, but volatile, and thus a differenttype of storage than the storage device 1321 (e.g., an SSD), which issuitable for long-term storage, including while in an “off” condition.The instructions 1324 or data in use by a user or the machine 1300 aretypically loaded in the memory 1304 for use by the processor 1302. Whenthe memory 1304 is full, virtual space from the storage device 1321 canbe allocated to supplement the memory 1304; however, because the storage1321 device is typically slower than the memory 1304, and write speedsare typically at least twice as slow as read speeds, use of virtualmemory can greatly reduce user experience due to storage device latency(in contrast to the memory 1304, e.g., DRAM). Further, use of thestorage device 1321 for virtual memory can greatly reduce the usablelifespan of the storage device 1321.

In contrast to virtual memory, virtual memory compression (e.g., theLinux® kernel feature “ZRAM”) uses part of the memory as compressedblock storage to avoid paging to the storage device 1321. Paging takesplace in the compressed block until it is necessary to write such datato the storage device 1321. Virtual memory compression increases theusable size of memory 1304, while reducing wear on the storage device1321.

Storage devices optimized for mobile electronic devices, or mobilestorage, traditionally include MMC solid-state storage devices (e.g.,micro Secure Digital (microSD™) cards, etc.). MMC devices include anumber of parallel interfaces (e.g., an 8-bit parallel interface) with ahost device, and are often removable and separate components from thehost device. In contrast, eMMC™ devices are attached to a circuit boardand considered a component of the host device, with read speeds thatrival serial ATA™ (Serial AT (Advanced Technology) Attachment, or SATA)based SSD devices. However, demand for mobile device performancecontinues to increase, such as to fully enable virtual oraugmented-reality devices, utilize increasing networks speeds, etc. Inresponse to this demand, storage devices have shifted from parallel toserial communication interfaces. Universal Flash Storage (UFS) devices,including controllers and firmware, communicate with a host device usinga low-voltage differential signaling (LVDS) serial interface withdedicated read/write paths, further advancing greater read/write speeds.

The instructions 1324 may further be transmitted or received over acommunications network 1326 using a transmission medium via the networkinterface device 1320 utilizing any one of a number of transferprotocols (e.g., frame relay, internet protocol (IP), transmissioncontrol protocol (TCP), user datagram protocol (UDP), hypertext transferprotocol (HTTP), etc.). Example communication networks may include alocal area network (LAN), a wide area network (WAN), a packet datanetwork (e.g., the Internet), mobile telephone networks (e.g., cellularnetworks), Plain Old Telephone (POTS) networks, and wireless datanetworks (e.g., Institute of Electrical and Electronics Engineers (IEEE)802.11 family of standards known as Wi-Fi®, IEEE 802.16 family ofstandards known as WiMax®), IEEE 802.15.4 family of standards,peer-to-peer (P2P) networks, among others. In an example, the networkinterface device 1320 may include one or more physical jacks (e.g.,Ethernet, coaxial, or phone jacks) or one or more antennas to connect tothe communications network 1326. In an example, the network interfacedevice 1320 may include a plurality of antennas to wirelesslycommunicate using at least one of single-input multiple-output (SIMO),multiple-input multiple-output (MIMO), or multiple-input single-output(MISO) techniques. The term “transmission medium” shall be taken toinclude any intangible medium capable of storing, encoding or carryinginstructions for execution by the machine 1300, and includes digital oranalog communications signals or other intangible medium to facilitatecommunication of such software.

The above detailed description includes references to the accompanyingdrawings, which form a part of the detailed description. The drawingsshow, by way of illustration, specific embodiments in which theinvention can be practiced. These embodiments are also referred toherein as “examples”. Such examples can include elements in addition tothose shown or described. However, the present inventor alsocontemplates examples in which only those elements shown or describedare provided. Moreover, the present inventor also contemplates examplesusing any combination or permutation of those elements shown ordescribed (or one or more aspects thereof), either with respect to aparticular example (or one or more aspects thereof), or with respect toother examples (or one or more aspects thereof) shown or describedherein.

In this document, the terms “a” or “an” are used, as is common in patentdocuments, to include one or more than one, independent of any otherinstances or usages of “at least one” or “one or more.” In thisdocument, the term “or” is used to refer to a nonexclusive or, such that“A or B” may include “A but not B,” “B but not A,” and “A and B,” unlessotherwise indicated. In the appended claims, the terms “including” and“in which” are used as the plain-English equivalents of the respectiveterms “comprising” and “wherein”. Also, in the following claims, theterms “including” and “comprising” are open-ended, i.e., a system,device, article, or process that includes elements in addition to thoselisted after such a term in a claim are still deemed to fall within thescope of that claim. Moreover, in the following claims, the terms“first,” “second,” and “third,” etc. are used merely as labels, and arenot intended to impose numerical requirements on their objects.

In various examples, the components, controllers, processors, units,engines, or tables described herein can include, among other things,physical circuitry or firmware stored on a physical device. As usedherein, “processor” means any type of computational circuit such as, butnot limited to, a microprocessor, a microcontroller, a graphicsprocessor, a digital signal processor (DSP), or any other type ofprocessor or processing circuit, including a group of processors ormulti-core devices.

Various embodiments according to the present disclosure and describedherein include memory utilizing a vertical structure of memory cells(e.g., NAND strings of memory cells). As used herein, directionaladjectives will be taken relative a surface of a substrate upon whichthe memory cells are formed (i.e., a vertical structure will be taken asextending away from the substrate surface, a bottom end of the verticalstructure will be taken as the end nearest the substrate surface and atop end of the vertical structure will be taken as the end farthest fromthe substrate surface).

Operating a memory cell, as used herein, includes reading from, writingto, or erasing the memory cell. The operation of placing a memory cellin an intended state is referred to herein as “programming,” and caninclude both writing to or erasing from the memory cell (e.g., thememory cell may be programmed to an erased state).

According to one or more embodiments of the present disclosure, a memorycontroller (e.g., a processor, controller, firmware, etc.) locatedinternal or external to a memory device, is capable of determining(e.g., selecting, setting, adjusting, computing, changing, clearing,communicating, adapting, deriving, defining, utilizing, modifying,applying, etc.) a quantity of wear cycles, or a wear state (e.g.,recording wear cycles, counting operations of the memory device as theyoccur, tracking the operations of the memory device it initiates,evaluating the memory device characteristics corresponding to a wearstate, etc.)

According to one or more embodiments of the present disclosure, a memoryaccess device may be configured to provide wear cycle information to thememory device with each memory operation. The memory device controlcircuitry (e.g., control logic) may be programmed to compensate formemory device performance changes corresponding to the wear cycleinformation. The memory device may receive the wear cycle informationand determine one or more operating parameters (e.g., a value,characteristic) in response to the wear cycle information.

It will be understood that when an element is referred to as being “on,”“connected to” or “coupled with” another element, it can be directly on,connected, or coupled with the other element or intervening elements maybe present. In contrast, when an element is referred to as being“directly on,” “directly connected to” or “directly coupled with”another element, there are no intervening elements or layers present. Iftwo elements are shown in the drawings with a line connecting them, thetwo elements can be either be coupled, or directly coupled, unlessotherwise indicated.

Method examples described herein can be machine or computer-implementedat least in part. Some examples can include a computer-readable mediumor machine-readable medium encoded with instructions operable toconfigure an electronic device to perform methods as described in theabove examples. An implementation of such methods can include code, suchas microcode, assembly language code, a higher-level language code, orthe like. Such code can include computer readable instructions forperforming various methods. The code may form portions of computerprogram products. Further, the code can be tangibly stored on one ormore volatile or non-volatile tangible computer-readable media, such asduring execution or at other times. Examples of these tangiblecomputer-readable media can include, but are not limited to, hard disks,removable magnetic disks, removable optical disks (e.g., compact discsand digital video disks), magnetic cassettes, memory cards or sticks,random access memories (RAMs), read only memories (ROMs), solid statedrives (SSDs). Universal Flash Storage (UFS) device, embedded MMC (eMMC)device, and the like.

The above description is intended to be illustrative, and notrestrictive. For example, the above-described examples (or one or moreaspects thereof) may be used in combination with each other. Otherembodiments can be used, such as by one of ordinary skill in the artupon reviewing the above description. It is submitted with theunderstanding that it will not be used to interpret or limit the scopeor meaning of the claims. Also, in the above Detailed Description,various features may be grouped together to streamline the disclosure.This should not be interpreted as intending that an unclaimed disclosedfeature is essential to any claim. Rather, inventive subject matter maylie in less than all features of a particular disclosed embodiment.Thus, the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment, and it is contemplated that such embodiments can be combinedwith each other in various combinations or permutations. The scope ofthe invention should be determined with reference to the appendedclaims, along with the full scope of equivalents to which such claimsare entitled.

Other Notes and Examples

Example 1 is a memory device that comprises a group of memory cells anda high-voltage shifter circuit. The high-voltage shifter circuit caninclude a signal transfer circuit, and first and second high-voltagecontrol circuits. The signal transfer circuit includes a P-channeltransistor coupled between an input port and an output port of thehigh-voltage shifter circuit, the P-channel transistor configured totransfer a high-voltage input received at the input port to an accessline controllably coupled to one or more of the group of memory cells.The first high-voltage control (HVC1) circuit is configured tocontrollably couple a bias voltage to the P-channel transistor for afirst time period. The second high-voltage control (HVC2) circuitconfigured to controllably couple a stress-relief signal to theP-channel transistor for a second time period, after the first timeperiod, to protect against degradation of the P-channel transistor.

In Example 2, the subject matter of Example 1 optionally includes thesignal transfer circuit that further includes an N-channel transistorhaving a gate coupled to the control signal. The N-channel transistorand the P-channel transistor can be serially connected and coupledbetween the input port and the output port of the high-voltage shiftercircuit.

In Example 3, the subject matter of Example 2 optionally includes theP-channel transistor that can be a high-voltage PMOS transistor with apositive threshold voltage. The N-channel transistor can be ahigh-voltage NMOS transistor with a negative threshold voltage.

In Example 4, the subject matter of any one or more of Examples 1-3optionally include the HVC1 circuit that can be configured to, at an endof the first time period, decouple the bias voltage from the P-channeltransistor and couple a ground potential (Vss) to the P-channeltransistor, and the HVC2 circuit that can be configured to, after aspecified switching delay from the end of the first time period, couplethe stress-relief signal to the P-channel transistor.

In Example 5, the subject matter of any one or more of Examples 1-4optionally includes the HVC1 circuit that can be configured to decouplethe bias voltage from, and to couple to the ground potential (Vss) to,the P-channel transistor in response to an output voltage at the outputport substantially reaching a value of the high-voltage input at theinput port.

In Example 6, the subject matter of any one or more of Examples 1-5optionally includes the HVC1 circuit that can be coupled to a gate of afirst N-channel transistor. The first N-channel transistor has a sourceconnected to a gate of the P-channel transistor.

In Example 7, the subject matter of Example 6 optionally includes thebias voltage that can have a value substantially equal to a supplyvoltage (Vcc).

In Example 8, the subject matter of any one or more of Examples 1-7optionally includes a high-voltage support (HVS) circuit configured togenerate the stress-relief signal, and to couple the stress-reliefsignal to a drain of a second N-channel transistor. The HVC2 circuit canbe coupled to a gate of the second N-channel transistor to control thetransfer of the stress-relief signal to the gate of P-channeltransistor.

In Example 9, the subject matter of Example 8 optionally includes theHVS circuit that can include a multiplexer configured to switch betweena high-voltage source and a ground potential (Vss).

In Example 10, the subject matter of any one or more of Examples 8-9optionally includes the high-voltage source of the HVS circuit that canhave a voltage proportional to the high-voltage input.

In Example 11, the subject matter of any one or more of Examples 1-10optionally includes the HVC1 circuit that can include a multiplexerconfigured to switch between a first voltage source and a groundpotential (Vss).

In Example 12, the subject matter of any one or more of Examples 1-11optionally includes the HVC2 circuit that can include a multiplexerconfigured to switch between a second voltage source and a groundpotential (Vss).

In Example 13, the subject matter of any one or more of Examples 1-12optionally includes the access line that can be configured to connect tothe output port of the high-voltage shifter circuit, and the signaltransfer circuit that can be configured to charge the access line usingthe transferred high-voltage input.

In Example 14, the subject matter of any one or more of Examples 1-13optionally includes the access line that can include a word line or aglobal word line.

Example 15 is a method of addressing potential degradation of aP-channel transistor of a signal transfer circuit in a high-voltageshifter of a memory device comprising a group of memory cells. Themethod comprises steps of, in response to a shifter enabling signal:generating a first control signal using a first high-voltage control(HVC1) circuit to controllably couple a bias voltage to the P-channeltransistor for a first time period, and at an end of the first timeperiod, to decouple the bias voltage from, and couple to a groundpotential (Vss) to, the P-channel transistor, generating a secondcontrol signal using a second high-voltage control (HVC2) circuit tocontrollably couple a stress-relief signal to the P-channel transistorafter a specified switching delay from the end of the first time periodto protect the P-channel transistor against degradation; and charging anaccess line, via the signal transfer circuit, by transferring ahigh-voltage input to the access line coupled to one or more of thegroup of memory cells.

In Example 16, the subject matter of Example 15 optionally includesmonitoring an output voltage of the high-voltage shifter, and decouplingthe P-channel transistor from the bias voltage and coupling to a groundpotential (Vss) in response to the output voltage substantially reachinga value of the high-voltage input.

In Example 17, the subject matter of any one or more of Examples 15-16optionally include: generating the stress-relief signal using ahigh-voltage support (HVS) circuit; coupling the stress-relief signal toa drain of a second N-channel transistor, and coupling the HVC2 circuitto a gate of the second N-channel transistor to controllably transferthe stress-relief signal to the gate of P-channel transistor.

In Example 18, the subject matter of any one or more of Examples 15-17optionally include the first control signal that can be substantially 5Volts, the second control signal that can be substantially 20 Volts. andthe stress relief signal that can be substantially 15 Volts.

In Example 19, the subject matter of any one or more of Examples 15-18optionally includes the P-channel transistor that can be a high-voltagePMOS (HVP) transistor.

In Example 20, the subject matter of any one or more of Examples 15-19optionally includes the access line that can include a word line or aglobal word line, and applying the transferred high-voltage input toprogram, erase, or read the one or more of the group of memory cells.

The invention claimed is:
 1. A memory device, comprising: a group ofmemory cells; and a high-voltage shifter circuit, including: a signaltransfer circuit, including a high-voltage transistor coupled between aninput port and an output port of the high-voltage shifter circuit, thehigh-voltage transistor configured to transfer a high-voltage inputreceived at the input port to an access line controllably coupledbetween the output port and one or more of the group of memory cells; afirst high-voltage control (HVC1) circuit configured to controllablycouple a bias voltage to the high-voltage transistor until a monitoredcondition is satisfied; and a second high-voltage control (HVC2) circuitconfigured to, in response to the satisfaction of the monitoredcondition, controllably couple a stress-relief signal to thehigh-voltage transistor to transfer the high-voltage input, for aspecified time period.
 2. The memory device of claim I. wherein themonitored condition includes a monitored voltage at the output port, andwherein a transition from an application of the bias voltage to anapplication of the stress-relief voltage occurs in response todetermining a specified relationship between the monitored voltage atthe output port relative to a value of the high-voltage input at theinput port.
 3. The memory device of claim 1, wherein the HVC1 circuit isconfigured to, in response to the satisfaction of the monitoredcondition, decouple the bias voltage from, and to couple to the groundpotential (Vss) to, the high-voltage transistor.
 4. The memory of deviceof claim 1, wherein the HVC2 circuit is configured to couple a groundpotential (Vss) to the high-voltage transistor for a first time perioduntil the monitored condition is satisfied.
 5. The memory device ofclaim 1, comprising a shifter selector circuit configured to couple ashifter enabling signal to an inverter to enable the voltage transferfrom the input port to the output port in response to a first state ofthe shifter enabling signal, and to disable the voltage transfer inresponse to a different second state of the shifter enabling signal. 6.The memory device of claim 5, wherein the inverter includes a secondN-channel transistor and a second P-channel transistor connected inparallel and coupled to the output port of the high-voltage shiftercircuit via a third N-channel transistor.
 7. The memory device of claim1, wherein the HVC1 circuit includes first digital switches configuredto switch between a first high-voltage source and a ground potential(Vss) coupled to the high-voltage transistor.
 8. The memory device ofclaim 1, further comprising a high-voltage support (HVS) circuitconfigured to generate the stress-relief signal coupled to thehigh-voltage transistor.
 9. The memory device of claim 8, wherein theHVS circuit includes third digital switches configured to switch betweena third high-voltage source and a ground potential (Vss).
 10. The memorydevice of claim 9, wherein the third high-voltage source has a voltageproportional to the high-voltage input.
 11. The memory device of claim9, wherein the HVC2 circuit includes second digital switches configuredto switch between a second high-voltage source and a ground potential(Vss) to control the transfer of the stress-relief signal.
 12. A memorydevice, comprising: an NAND memory cell array; and a charging circuitconfigured to apply a programming voltage to a word line (WL) or aglobal word line (GWL) controllably coupled to one or more memory cellsof the NAND memory cell array, the charging circuit including ahigh-voltage shifter circuit that comprises: a signal transfer circuitincluding a high-voltage transistor coupled between an input port and anoutput port of the high-voltage shifter circuit, the high-voltagetransistor configured to transfer the programming voltage received atthe input port to the WL or the GWL coupled to the output port; a firsthigh-voltage control (HVC1) circuit configured to controllably couple abias voltage to the high-voltage transistor until a monitored conditionis satisfied; and a second high-voltage control (HVC2) circuitconfigured to, in response to the satisfaction of the monitoredcondition, controllably couple a stress-relief signal to thehigh-voltage transistor to transfer the programming voltage for aspecified time period; wherein the charging circuit is configured toapply the transferred programming voltage to the WL or the GWL toprogram the one or more memory cells coupled to the WL or the GWL. 13.The memory device of claim 12, wherein the monitored condition includesa monitored voltage at the output port, and wherein a transition from anapplication of the bias voltage to an application of the stress-reliefvoltage occurs in response to determining a specified relationshipbetween the monitored voltage at the output port relative to a value ofthe high-voltage input at the input port.
 14. The memory device of claim12, wherein the high-voltage shifter includes a shifter selector circuitconfigured to couple a shifter enabling signal to an inverter to enablethe voltage transfer from the input port to the output port in responseto a first state of the shifter enabling signal, and to disable thevoltage transfer in response to a different second state of the shifterenabling signal.
 15. The memory device of claim 14, wherein the inverterincludes a second N-channel transistor and a second P-channel transistorconnected in parallel and coupled to the output port of the high-voltageshifter circuit via a third N-channel transistor.
 16. The memory deviceof claim 12, wherein the high-voltage shifter includes a high-voltagesupport (HVS) circuit including third digital switches configured toswitch between a third high-voltage source and a ground potential (Vss),the HVS circuit configured to generate the stress-relief signal coupledto the high-voltage transistor.
 17. A memory device, comprising: a groupof memory cells access through use of multiple access lines respectivelycoupled to multiple memory cells of the group of memory cells; and ahigh-voltage shifter circuit, including: a high-voltage transistorcoupled between an input port and an output port of the high-voltageshifter circuit, the high-voltage transistor configured to transfer ahigh-voltage input received at the input port to an access line coupledbetween the output port and one or more of the group of memory cells; acontrol circuit configured to controllably couple a bias voltage to thehigh-voltage transistor until a monitored condition is satisfied, and inresponse to the satisfaction of the monitored condition, controllablycouple a stress-relief signal to the high-voltage transistor to transferthe high-voltage input to the high voltage output port.
 18. The memorydevice of claim 17, comprising a shifter selector circuit configured tocouple a shifter enabling signal to an inverter to enable the voltagetransfer from the input port to the output port in response to a firststate of the shifter enabling signal, and to disable the voltagetransfer in response to a different second state of the shifter enablingsignal.
 19. A memory device, comprising: a group of memory cells; and acontrol circuit configured to: couple a bias voltage to a high-voltagetransistor that is coupled between an input port and an output port ofthe high-voltage shifter circuit until a monitored condition issatisfied; in response to the satisfaction of the monitored condition,couple a high-voltage source to the high-voltage transistor to turn onthe high-voltage transistor for a specified time period; and transfer ahigh-voltage input received at the input port to an access line duringthe specified time period, the access line coupled between the outputport and multiple memory cells of the group of memory cells.
 20. Thememory device of claim 19, wherein the monitored condition includes amonitored voltage at the output port, and wherein a transition from anapplication of the bias voltage to an application of the stress-reliefvoltage occurs in response to determining a specified relationshipbetween the monitored voltage at the output port relative to a value ofthe high-voltage input at, the input port.